Design and Simulation of a Cs₂AgBiBr₆/PbS-TBAI Dual-Absorber Hybrid Solar Cell using SCAPS-1D
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Abstract
A double perovskite, -based solar cells have attracted considerable attention due to their promising efficiency, along with their stability and earth-abundant composition. At the same time, PbS–TBAI has emerged as a high-performing quantum dot material, demonstrating strong potential for photovoltaic applications. In this study, we investigate a hybrid solar cell that combines both of these absorber materials. The primary absorber layer is PbS–TBAI, while PCBM is employed as the electron transport layer (ETL) and as the hole transport layer (HTL). For further extension the absorption range and support overall light harvesting, two materials having different bandgap can enhance the absorption. A double perovskite layer is integrated with PbS–TBAI. The inclusion of this secondary absorber leads to a notable improvement in device performance, achieving an efficiency of 27.90% with an open-circuit voltage of 0.8665 V, a short-circuit current density of 40.68 mA cm⁻², and a fill factor of 79.16%. The optimization process was carried out by varying the thicknesses of both absorber layers, as well as analyzing the effect of interface defect density at the junction. In addition, the doping densities of the ETL and HTL were carefully adjusted to refine the device architecture.